Machine Type:
Process Equipment
Make:
Plasma Etch
Model:
MK II
Year:
2017
SPECIFICATIONS
Process Temperature Control: 125F - 300F + - 5F
Electrostatic Shielding
6 Level Horizontal Planar Electrode Configuration
24"W x 18"D, 1.50" Spacing
Color Touch Screen PC Control System
Intuitive Custom Plasma Etch, INC. Software
1200W 13.56 MHz Solid State RF Generator
Automatic RF Matching Network
30CFM Oxygen Service Vacuum Booster
2-2000 SCCM Mass Flow Controllers, 2 Gas Channels
Automatic Nitrogen Purging for Vacuum Pump
Oil Mist Coalescing Filter on Vacuum Pump Exhaust